Surface morphology and Raman spectra of gallium compounds

  • G. Sugurbekova Nazarbayev University and Research Innovation System, Astana
  • H. Abdullin al-Farabi Kazakh National University
  • D. Urozaev Nazarbayev University and Research Innovation System, Astana
  • Rustem Bolat Nazarbayev University and Research Innovation System, Astana
  • D. Alimzhanov Nazarbayev University and Research Innovation System, Astana
DOI: https://doi.org/10.15328/chemb_2013_4125-132
Keywords: gallium nitride, surface morphology, chemical vapor deposition (CVD), substrate, polycrystal

Abstract

Results of studies of microstructure and surface morphology of gallium nitride obtained by chemical vapor deposition (CVD) on silicon and quartz substrates were presented in this paper. Raman spectra, X-ray diffraction and EDAX were studied. Gallium nitride with pyramidal structure at 760 °C at normal atmospheric pressure, uniform in size (1,75 μm) and directed mainly perpendicular to the substrate surface height 4,59 μm was obtained.

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Published
2013-09-14
How to Cite
Sugurbekova, G., Abdullin, H., Urozaev, D., Bolat, R., & Alimzhanov, D. (2013). Surface morphology and Raman spectra of gallium compounds. Chemical Bulletin of Kazakh National University, 72(4), 125-132. https://doi.org/https://doi.org/10.15328/chemb_2013_4125-132
Issue
Vol 72 No 4 (2013): Chemical Bulletin of Kazakh National University
Section
Inorganic Chemistry
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